METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Provided is a method for manufacturing a semiconductor component capable of strengthening stress of a channel area of a transistor by using a silicide film having high tensile stress in a source and drain area. The method for manufacturing the semiconductor component comprises a step for forming a first gate pattern which a first silicon gate electrode is exposed on a first active area of a substrate; a step for forming a second gate pattern which a second silicon gate electrode and a first gate mask are successively laminated on a second active area of the substrate; a step for forming a first phase silicide film on the first active area of both sides of the first gate pattern, the first silicon gate electrode, and the second active area of both sides of the second gate pattern; a step for forming an interlayer insulation film which surrounds the first gate pattern and the second gate pattern, and exposes the first phase silicide film on the first silicon gate electrode and the first gate mask; and a step for forming a second phase silicide film by spreading silicide to the second silicon gate electrode after forming a pattern of the interlayer insulation film.