SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device in the present invention includes a semiconductor layer; a gate electrode which covers the end of the semiconductor layer; and an insulation layer which insulates the semiconductor layer and the gate electrode. The thickness of the insulation layer which insulates the area whe...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TANADA YOSHIFUMI, TAKAHASHI SYUHEI, SUZUKI YUKIE, MORIYA YOSHITAKA, YAMAZAKI SHUNPEI, ARAI YASUYUKI, IKEDA KAZUKO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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