SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device in the present invention includes a semiconductor layer; a gate electrode which covers the end of the semiconductor layer; and an insulation layer which insulates the semiconductor layer and the gate electrode. The thickness of the insulation layer which insulates the area whe...

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Bibliographische Detailangaben
Hauptverfasser: TANADA YOSHIFUMI, TAKAHASHI SYUHEI, SUZUKI YUKIE, MORIYA YOSHITAKA, YAMAZAKI SHUNPEI, ARAI YASUYUKI, IKEDA KAZUKO
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device in the present invention includes a semiconductor layer; a gate electrode which covers the end of the semiconductor layer; and an insulation layer which insulates the semiconductor layer and the gate electrode. The thickness of the insulation layer which insulates the area where the end of the semiconductor layer and the gate electrode are overlapped is greater than the thickness of the insulation layer which covers the central part of the semiconductor layer.