METHOD OF DEPOSITING SILICON DIOXIDE FILMS

The present invention relates to plasma enhanced chemical vapor deposition (PECVD), more specifically, and a method for depositing a silicon dioxide film by using tetraethyl ortosilicate (TEOS). The method can be performed at a standard temperature or at a low temperature and is useful to manufactur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	CROOK KATHRINE, ARCHARD DANIEL, PRICE ANDREW, BURGESS STEPHEN, CARRUTHERS MARK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to plasma enhanced chemical vapor deposition (PECVD), more specifically, and a method for depositing a silicon dioxide film by using tetraethyl ortosilicate (TEOS). The method can be performed at a standard temperature or at a low temperature and is useful to manufacture a wafer having a penetration silicon via.