METHODS AND APPARATUS FOR VIA LAST THROUGH-VIAS

PURPOSE: A method for a via last penetrating via and a device thereof are provided to restrict oxide cracking and metal extrusion by forming an oxide penetrating via using a low temperature etching process. CONSTITUTION: At least one via (40) is formed in a carrier wafer (41). At least one via is fi...

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Bibliographische Detailangaben
Hauptverfasser:	YAUNG DUN NIAN, CHEN SZU YING, CHEN PAO TUNG, LIU JEN CHENG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for a via last penetrating via and a device thereof are provided to restrict oxide cracking and metal extrusion by forming an oxide penetrating via using a low temperature etching process. CONSTITUTION: At least one via (40) is formed in a carrier wafer (41). At least one via is filled with an oxide (42). The carrier wafer is mounted on a second wafer (11). A penetrated via expanded through the carrier wafer is etched. The oxide penetrating via expanded through the oxide of the penetrated via is filled with a conductive material (31).