METHOD AND DEVICE FOR PRODUCING POLYCRYSTALLINE SILICON BLOCKS

A crucible is filled with silicon material and is arranged in a process chamber. The silicon material in the crucible is melted and is subsequently cooled below the solidification temperature. During a time period, a plate element that has at least one passage may be arranged over the molten silicon...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	HOESS CHRISTIAN, HUSSY STEPHAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A crucible is filled with silicon material and is arranged in a process chamber. The silicon material in the crucible is melted and is subsequently cooled below the solidification temperature. During a time period, a plate element that has at least one passage may be arranged over the molten silicon in the crucible, and a gas flow may be directed onto the surface of the molten silicon at least partially via the at least one passage. Alternatively a crucible arrangement includes a crucible and a holding ring arranged on or above a crucible filled with silicon material. Additional silicon material may be received and held above the crucible by the holding ring. During the heating of the silicon material in the crucible and the holding ring, molten silicon is formed in a crucible, which is subsequently cooled below the solidification temperature of the silicon.