POLYCRYSTALLINE SILICON INGOT AND PRODUCTION METHOD THEREOF

PURPOSE: A polycrystalline silicon ingot and a manufacturing method thereof are provided to evaluate the maximum surrounding deformation of the polycrystalline silicon ingot, thereby suppressing the generation of defects due to the processing. CONSTITUTION: A method for manufacturing a polycrystalline silicon ingot comprises the steps of: measuring the maximum surrounding deformation of a polycrystalline silicon ingot previously manufactured (S12); setting up the heat treatment conditions of the heat treatment process and the re-heat treatment process within a crucible so that the maximum surrounding deformation is less than a predetermined value (S13); manufacturing the polycrystalline silicon ingot by coagulating silicon melt within the crucible in one direction (S21); treating the polycrystalline silicon ingot by heating within the crucible (S22); and taking the polycrystalline silicon ingot out of the crucible and re-treating the polycrystalline silicon ingot by heating (S23). [Reference numerals] (AA) Starting ingot; (BB) No; (CC) Below a certain maximum surrounding deformation value; (DD) Yes; (EE) Polycrystalline silicon ingot; (S11) Starting process; (S12) Maximum surrounding deformation evaluation process; (S13) Heat treatment condition setting process; (S21) Manufacturing process; (S22) Crucible-inside heating process; (S23) Re-heating process