SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE DEVICE

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the performance of the semiconductor device by reducing parasitic capacitance between a contact and a gate structure. CONSTITUTION: A gate insulation film pattern (110) is formed on the semiconductor substrate...

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Bibliographische Detailangaben
Hauptverfasser:	YOON JONG SHIK, KIM, YOON HAE, KANG, HONG SEONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve the performance of the semiconductor device by reducing parasitic capacitance between a contact and a gate structure. CONSTITUTION: A gate insulation film pattern (110) is formed on the semiconductor substrate. A gate electrode (192) is formed on the gate insulation film pattern. A spacer structure is formed on one side of the gate insulation film pattern and the gate electrode. A first insulation film spacer (140) is in contact with the gate insulation film pattern. An air gap spacer and a second insulation film spacer are successively formed on the outside of the first insulation film spacer.