NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve internal quantum efficiency by forming an active layer of a multi-quantum well structure. CONSTITUTION: An n-type semiconductor layer is formed. An active layer (150) is formed on the n-...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SOHN, YU RI, CHEON JOO YOUNG
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to improve internal quantum efficiency by forming an active layer of a multi-quantum well structure. CONSTITUTION: An n-type semiconductor layer is formed. An active layer (150) is formed on the n-type semiconductor layer. A nitride layer is alternately deposited on the active layer. A super lattice layer (140,160) is formed by the above-mentioned deposition process. A p-type semiconductor layer (170) is formed on the super lattice layer.