FINFET AND METHOD OF FABRICATING THE SAME

FINFET AND METHOD OF FABRICATING THE SAME

PURPOSE: A fin field effect transistor and a method for fabricating the same are provided to apply different stress to a fin body by bonding the upper surface of the fin body and the lateral surface of an epitaxial layer. CONSTITUTION: A fin body protrudes from the surface of a substrate. A device i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KANG, MYUNG GIL, JEONG, HEE DON, CHO, CHI WON, OH, CHANG WOO
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A fin field effect transistor and a method for fabricating the same are provided to apply different stress to a fin body by bonding the upper surface of the fin body and the lateral surface of an epitaxial layer. CONSTITUTION: A fin body protrudes from the surface of a substrate. A device isolation layer (9) covers the lower side of the fin body. A first epitaxial layer (11) is in contact with the upper side of the fin body. A second epitaxial layer (13) is in contact with the upper side of the fin body. The lattice structure of the first epitaxial layer is different from the lattice structure of the second epitaxial layer.