PROCESS TO OPEN CARBON BASED HARDMASK

PROCESS TO OPEN CARBON BASED HARDMASK

PURPOSE: A process for opening a carbon-based hard mask is provided to etch masks with high carbon fractions. CONSTITUTION: An etch stop layer (14) made of silicon nitride is formed on a silicon substrate (12). A dielectric layer (16) is formed on the etch stop layer. An ARC layer (20) is formed on...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUNG SHING LI, WANG JUDY, MA SHAWMING, PU BRYAN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A process for opening a carbon-based hard mask is provided to etch masks with high carbon fractions. CONSTITUTION: An etch stop layer (14) made of silicon nitride is formed on a silicon substrate (12). A dielectric layer (16) is formed on the etch stop layer. An ARC layer (20) is formed on the dielectric layer. The ARC layer includes a bottom DARC layer (24) made of silicon oxynitride and a top BARC layer (26) made of an organic material. The DARC layer is partially used to improve the adhesion of the top BARC layer and a carbon-based hard mask layer.