2-TRANSISTOR FLASH MEMORY AND PROGRAMMING METHOD OF 2-TRANSISTOR FLASH MEMORY

PURPOSE: A 2-transistor flash memory and a programming method of the 2-transistor flash memory are provided to improve reliability by floating a control gate of a cell transistor of an unselected memory cell located in a different row from a row of a selected memory cell in a programming process. CONSTITUTION: A row driver (120) is connected to selection transistors and cell transistors of memory cells located in the same row. A read and write circuit (140) is connected to the memory cells located in the same column and controls byte selection transistors. A control logic (160) delivers high voltage to the row driver, the read and write circuit and a memory cell array. The row driver and the read and write circuit apply voltage to float a control gate of the cell transistor of an unselected memory cell located in a different row from a row of a selected memory cell in a programming progress.