APPARATUS OF CZOCHRALSKI SINGLE CRYSTAL SILICON INGOT

PURPOSE: An apparatus for manufacturing a single crystal silicon ingot is provided to secure a high quality ingot by restraining the generation of impurities. CONSTITUTION: A crucible is installed in a chamber. A susceptor supports the crucible. An inner crucible (130) is positioned in the crucible....

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CHUNG, YOON SUB, PARK, YOUN SEOK, JOHN CHUN SOO LIM, YOON, YEO KYUN, KIM, JIN SUNG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR ARTIFICIAL STONE CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CRYSTAL GROWTH LIME, MAGNESIA METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL REFRACTORIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SLAG TREATMENT OF NATURAL STONE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: An apparatus for manufacturing a single crystal silicon ingot is provided to secure a high quality ingot by restraining the generation of impurities. CONSTITUTION: A crucible is installed in a chamber. A susceptor supports the crucible. An inner crucible (130) is positioned in the crucible. A heater (140) heats the crucible. An insulator (150) prevents the thermal release of the heater.