SEMICONDUCTOR DEVICE

PURPOSE: A semiconductor device is provided to reduce the parasitic capacitance of a bit line by forming an insulating material between the bit line and a hard mask, and between the bit line and a space. CONSTITUTION: A bit line (210) is formed on an insulating layer (250). A hard mask (220) is formed on the bit line. At least one spacer (230) is formed on the sidewall of the hard mask and the bit line. An insulating material (240) is formed between the bit line and the hard mask, and the between the bit line and a spacer. The dielectric constant of the insulating material is lower than the dielectric constant of the hard mask and the spacer.