GAS INJECTING DEVICE AND SUBSTRATE PROCESSING APPARATUS HAVING THE SAME

PURPOSE: A gas injection device and a substrate processing device including the same are provided to improve a deposition uniformity of a thin film by uniformly supplying a process gas to the whole area of a substrate. CONSTITUTION: A gas injection unit has a gas diffusion space between an injection...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, YOUNG HYO, LEE, SANG JIN, KIM, YOUNG JUN, HEO, PIL WUNG, HWANG, HUI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A gas injection device and a substrate processing device including the same are provided to improve a deposition uniformity of a thin film by uniformly supplying a process gas to the whole area of a substrate. CONSTITUTION: A gas injection unit has a gas diffusion space between an injection plate(126) and a top lid(122). A gas inlet is formed on the top lid with a number corresponding to the number of the gas injection units. The injection plate is separately combined with one lower part of the top lid. Multiple gas injection holes(128) connected to the gas inlet are formed on the injection plate. The gas injection holes are separated at regular intervals in the radial direction of a gas injection device(120) and form each column(C1,C2).