MANUFACTURING METHOD OF LAYER TRANSFERRED SUBSTRATE

MANUFACTURING METHOD OF LAYER TRANSFERRED SUBSTRATE

PURPOSE: A method for manufacturing a transferred substrate is provided to separate an ion implantation layer by a heating process under uniform pressure, and improve the surface roughness of the transferred substrate. CONSTITUTION: An ion implantation layer is formed by injecting ions to a first su...

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Bibliographische Detailangaben
Hauptverfasser: KIM, DONG HYUN, SHUR, JOONG WON, JUNG, KYUNG SUB, JEON, JONG PIL, KIM, A RA, KIM, MIN JU
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: A method for manufacturing a transferred substrate is provided to separate an ion implantation layer by a heating process under uniform pressure, and improve the surface roughness of the transferred substrate. CONSTITUTION: An ion implantation layer is formed by injecting ions to a first substrate(S100). A second substrate is bonded to the ion implantation surface of the first substrate(S200). A heating and a pressing process are performed on the bonding substrate consisting of the first substrate and the second substrate to separate the ion implantation layer from the first substrate(S300). [Reference numerals] (S100) Form an ion implantation layer on a first substrate; (S200) Bond the first substrate and a second substrate; (S300) Separate the first substrate by a heating and a pressing process