READING METHOD OF NON-VOLATILE MEMORY DEVICE

PURPOSE: A method for reading a nonvolatile memory device is provided to reduce the influence of charges injected to a floating gate of an adjacent memory cell by applying a second pass voltage to an adjacent control gate when a read voltage is applied to a control gate of a selected memory cell. CONSTITUTION: A unit memory cell includes a floating gate and two control gates near the floating gate. Two memory cells share one control gate. A read voltage is applied to the control gate of the selected memory cell. A second pass voltage is applied to an odd control gate arranged from the control gate of the selected memory cell. A first pass voltage is applied to an even control gate arranged from the control gate of the selected memory cell.