METHODS OF FORMING A PATTERN AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

METHODS OF FORMING A PATTERN AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

PURPOSE: A method for forming a pattern and a method for manufacturing a semiconductor device using the same are provided to prevent a collapse phenomenon by forming a single etch mask. CONSTITUTION: A first mask layer and a first sacrificial layer are successively formed on an etch object layer(105...

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Bibliographische Detailangaben
Hauptverfasser: IM, DONG HYUN, SHIM, JAE JOO, SUH, KI SEOK, OH, GYU HWAN, PARK, DOO HWAN, KIM, BYEUNG CHUL, KANG, YOUN SEON, KO, SEUNG PIL
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A method for forming a pattern and a method for manufacturing a semiconductor device using the same are provided to prevent a collapse phenomenon by forming a single etch mask. CONSTITUTION: A first mask layer and a first sacrificial layer are successively formed on an etch object layer(105). The first sacrificial layer is partly etched to form a first sacrificial layer pattern. A second sacrificial layer pattern is formed on the first mask layer. The first sacrificial layer pattern is removed. A first mask layer pattern(115) is formed by partly etching the first mask layer. [Reference numerals] (AA) Second direction; (BB) First direction