METHOD OF FORMING FINE PATTERN MASK AND METHOD OF FORMING FINE PATTENR USING THE SAME

PURPOSE: A method for forming a fine pattern mask and a method for forming a fine pattern using the same are provided to use a fine pattern mask as an etch mask and improve the uniformity and the accuracy of a fine pattern. CONSTITUTION: An etch object layer(10) is formed on a substrate. A convex pa...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, SUNG HUN, LEE, JI SEON, KHANG, YOON HO, UM, HYOUNG SICK, CHAE, JAE JUN, SUH, KAHP YANG, YU, SE HWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS THEREFOR MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a fine pattern mask and a method for forming a fine pattern using the same are provided to use a fine pattern mask as an etch mask and improve the uniformity and the accuracy of a fine pattern. CONSTITUTION: An etch object layer(10) is formed on a substrate. A convex pattern having convex parts is formed on the etch object layer. A resin composition is coated on the convex pattern to form a resin layer. The resin layer is ashed or etched to form a first resin pattern(40b) having a second curved surface(Cv2). The first resin patterns is processed to form a second resin pattern(40c) having a third curved surface(Cv3). The etch object layer is etched using the second resin pattern as an etch mask to form a fine pattern. [Reference numerals] (AA) Heat