INNER PART PLATING METHOD OF REACTING CHAMBER FOR MANUFACTURING SEMICONDUCTOR SILICON INGOT

PURPOSE: An inner surface plating method of a furnace for manufacturing semiconductor silicon ingot is provided to maintain high hardness and to minimize generation of impurity when manufacturing silicon ingot. CONSTITUTION: An inner surface plating method of a furnace for manufacturing semiconducto...

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Hauptverfasser:	PARK, SANG BONG, HONG, JUN HO, JANG, SI SUNG, SEO, IN HYUK, AHN, SIN OK, KIM, GEUN YOUNG, JUNG, RAE HYEONG, KANG, SEOK MO, HAN, SANG PHIL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS THEREFOR CHEMISTRY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
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