INNER PART PLATING METHOD OF REACTING CHAMBER FOR MANUFACTURING SEMICONDUCTOR SILICON INGOT

PURPOSE: An inner surface plating method of a furnace for manufacturing semiconductor silicon ingot is provided to maintain high hardness and to minimize generation of impurity when manufacturing silicon ingot. CONSTITUTION: An inner surface plating method of a furnace for manufacturing semiconductor silicon ingot comprises: a step of cleaning inner surface of the furnace for manufacturing silicon ingot(S1); a step of arranging the furnace to a support jig and sealing by inserting a stopper to end portion of top of the furnace(S2); a step of fixing an insulator to end of a chamber of the furnace(S3); a step of fixing cathode to the outer surface of the furnace and fixing anode in inner center of the furnace(S4); a step of putting plating liquid inside the furnace and pre-plating using nickel strike plating method(S5); and a step of solver plating by electrolysis inside the furnace and forming Ni-Mn alloy inner wall(S6). [Reference numerals] (S1) Step of washing the inner surface of a reactor for manufacturing silicon ingot; (S2) Step of arranging and fixing the reactor on a support jig and sealing one end with a stopper; (S3) Step of arranging and fixing an insulator on the reactor; (S4) Step of fixing an anode and a cathode on the interior and exterior of the reactor respectively; (S5) Step of plating as a pre-process; (S6) Step of plating as a main process for nickel-manganese alloy plating;