OXIDE THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: An oxide thin film transistor and a manufacturing method thereof are provided to minimize parasitic capacitance by removing an overlapped area of a gate electrode, a source electrode, and a drain electrode. CONSTITUTION: A gate electrode(124) is formed on a gate insulation layer(104). An interlayer dielectric layer(126) includes a first contact hole(128a) and a second contact hole(128b). A source electrode(132a) and a drain electrode(132b) are electrically connected to a first region(122a) and a second region(122b). A protection layer(134) includes a third contact hole to expose a part of the drain electrode. A pixel electrode(138) is electrically connected to the drain electrode.