APPARATUS AND METHOD TO DEPOSITION SUBSTRATE

PURPOSE: A substrate metalizing device and a method thereof are provided to improve the efficiency of a substrate metalizing process by forming a middle layer of a substrate and a DLC(Diamond Like Carbon) thin film. CONSTITUTION: A substrate metalizing device comprises a process chamber and an ion b...

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Bibliographische Detailangaben
Hauptverfasser:	SHIN, CHANG SEOUK, PARK, MIN SEOK, BANG, HYUN BAE, JO, HYUNG HO, JUNG, UOO CHANG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: A substrate metalizing device and a method thereof are provided to improve the efficiency of a substrate metalizing process by forming a middle layer of a substrate and a DLC(Diamond Like Carbon) thin film. CONSTITUTION: A substrate metalizing device comprises a process chamber and an ion beam source unit. The ion beam source unit irradiates ion beams to a substrate, thereby forming a DLC thin film on the substrate. The ion beam source unit includes a cathode and an anode which becomes ionized by gas flow. An anode protecting unit(140) protecting the anode by reducing deposit speed of foreign materials including carbon which may be produced in the anode during metalizing process.