SPUTTERING TARGET TA SHEET AND MANUFACTURING METHOD OF THE SAME

PURPOSE: A Ta(tantalum) sheet for a sputtering target and a manufacturing method thereof are provided to improve purity because the size of final grains of the Ta sheet is below 35 micrometers and is composed of a structure in which orientation is priority. CONSTITUTION: A Ta sheet manufacturing met...

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Bibliographische Detailangaben
Hauptverfasser: KIM, HYUN MIN, IM, SUNG CHUL, LIM, YONG DEOK, SONG, KYU YOUNG, GWON, HYEOK CHEON, WOO, SANG MO
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:PURPOSE: A Ta(tantalum) sheet for a sputtering target and a manufacturing method thereof are provided to improve purity because the size of final grains of the Ta sheet is below 35 micrometers and is composed of a structure in which orientation is priority. CONSTITUTION: A Ta sheet manufacturing method includes the following steps: Melted and casted Ta ingots or billets are cold-forged and cold-rolled in order and are annealed at 1173-1573K in order to make the mean diameter of the grains to below 35 micrometers. The cold-forging step includes the following steps: A forging process is implemented by applying a plastic working rate of 40-60%. An intermediate forging process is implemented at below the recrystalization temperature of Ta in order to improve processability.