LIGHT EMITTING DIODE

LIGHT EMITTING DIODE

PURPOSE: A light emitting device is provided to reduce the lattice mismatch between a buffer layer and a light emitting structure by using a buffer layer made of nitride. CONSTITUTION: A buffer layer(210) is arranged on an R-plane sapphire substrate. The buffer layer is made of nitride having a rock...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SHIM, HEE JAE
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A light emitting device is provided to reduce the lattice mismatch between a buffer layer and a light emitting structure by using a buffer layer made of nitride. CONSTITUTION: A buffer layer(210) is arranged on an R-plane sapphire substrate. The buffer layer is made of nitride having a rock salt structure. A light emitting structure(120) is arranged on the buffer layer. The light emitting structure includes a first conductive semiconductor layer(122), an active layer(124), and a second conductive semiconductor layer(126). The light emitting structure includes A-plane GaN.