THIN FILM TRANSISTOR USING OXIDIZED SEMICONDUCOTOR AND METHOD FOR FABRICATING THE SAME

PURPOSE: A thin film transistor using an oxide semiconductor layer and a manufacturing method thereof are provided to prevent external light from being transmitted to an active layer along a gate insulation layer by installing a light shielding unit around an oxide semiconductor layer used as the ac...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BAE, JUN HYEON, KIM, DAE HWAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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