THIN FILM TRANSISTOR USING OXIDIZED SEMICONDUCOTOR AND METHOD FOR FABRICATING THE SAME

PURPOSE: A thin film transistor using an oxide semiconductor layer and a manufacturing method thereof are provided to prevent external light from being transmitted to an active layer along a gate insulation layer by installing a light shielding unit around an oxide semiconductor layer used as the active layer. CONSTITUTION: A gate electrode(114) is formed on a substrate(112). A gate insulation layer(116) is formed on the substrate including the gate electrode. An oxide semiconductor layer(118) used as the gate insulation layer is formed on the gate insulation layer corresponding to the gate electrode. A light shielding unit(148) is formed around the oxide semiconductor layer. A source electrode(120) and a drain electrode(122) are connected to the oxide semiconductor layer.