POLY SILICON DEPOSITION DEVICE

PURPOSE: A polysilicon manufacturing device having improved reaction gas flow is provided to reduce generation of a powder by improving a rising flow of a reaction gas as a lower part of a jacket unit is separated from a bottom plate of a bell-shaped reactor. CONSTITUTION: A polysilicon manufacturing device having improved reaction gas flow comprises a bell-jar reactor(110), an electrode unit(120), a silicon core rod unit(130), and a jacket unit(140). The bell-jar reactor comprises a gas injection pipe(112) and a gas exhausting pipe(114) for discharging an exhaust gas, and a chamber(111) is formed inside the bell-jar. The electrode unit penetrates the bottom plate of the bell-jar reactor and protrudes into the chamber. Also, the electrode unit comprises a first electrode(122) and a second electrode(124). The silicon core rod unit connects the first electrode and the second electrode to allow a current induced to the first electrode to flow into the second electrode. As the silicon core rod unit is heated, the reaction gas is thermally decomposed, and thus silicon is deposited on a surface of the silicon core rod unit. The jacket unit is disposed to surround a circumference of the silicon core rod and heats up the silicon core rod unit. The jacket unit has a cylinder shape of which its top and bottom are opened. A lower part of the jacket unit is separated from the bottom plate of the bell-jar reactor, and thus a flow of the reaction gas is improved.