CRYSTALLIZATION METHOD OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL

PURPOSE: A method for crystallizing a thin film transistor, a thin film transistor display plate, and a manufacturing method thereof are provided to form uniformly crystallized silicon by locally crystallizing a part corresponding to a channel region using a microlens array. CONSTITUTION: A gate lin...

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Bibliographische Detailangaben
Hauptverfasser:	LEE, HYOUNG CHEOL, LIM, JEE HUN, KOO, SO YOUNG, JUNGH, WA DONG, YEOM, JOO SEOK, KWON, HYUK SOON, YIM, TAE KYUNG, KIM, JOO HAN, LEE, JAE HAK, PARK, JEONG JU, KWON, SE MYUNG, IM, WAN SOON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for crystallizing a thin film transistor, a thin film transistor display plate, and a manufacturing method thereof are provided to form uniformly crystallized silicon by locally crystallizing a part corresponding to a channel region using a microlens array. CONSTITUTION: A gate line(121) including a gate electrode(124) is formed on a substrate. A gate insulation layer to cover the gate line is formed. A semiconductor layer(151) is formed on the gate insulation layer. A data line(171), a source electrode(173), and a drain electrode(175) are formed on the semiconductor layer. A protection layer is formed on the source electrode and the drain electrode.