METHODS UCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

PURPOSE: A method for forming a metal pattern and a method for manufacturing a semiconductor device are provided to prevent a photoresist pattern from being damaged in a metal layer etching process by forming a thin film capping layer on the surface of the photoresist pattern formed on the metal lay...

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Bibliographische Detailangaben
Hauptverfasser:	KIM, JAE HO, KANG, YOOL, LEE, DONG JUN, SHIN, KYU SIK, YANG, JOO HYUNG, LEE, HYUNG RAE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a metal pattern and a method for manufacturing a semiconductor device are provided to prevent a photoresist pattern from being damaged in a metal layer etching process by forming a thin film capping layer on the surface of the photoresist pattern formed on the metal layer. CONSTITUTION: A metal layer is formed on a substrate(10). A photoresist pattern(30) is formed on the metal layer. A capping layer(50) is formed by coating the photoresist pattern with overcoating compositions including polymer materials and solvents. The remaining overcoating compositions are removed. The metal layer is etched by using the capping layer and the photoresist pattern as an etch mask.