METHOD FOR FORMING A TUNGSTEN FILM

PURPOSE: A method for forming a tungsten film is provided to prevent an air gap or seam in a buried part by forming the tungsten film two or more times with a CIF3 gas or F2 gas etching process. CONSTITUTION: A buried part of tungsten is formed in a hole by forming a tungsten film on a substrate with the hole with CVD. The upper side of the buried part is etched by supplying CIF3 gas or F2 gas to a processing container. A tungsten film is formed in the processing container with CVD. [Reference numerals] (AA) Start; (BB) End; (S1) Forming a buried part by burying a hole with tungsten; (S2) Etching an upper side of a buried part by forming an opening hole on the upper side through CIF_3(or F_2); (S3) Forming a tungsten film for burying a hole with tungsten from an opening hole after etching