METHOD OF GRAPHENE GROWING AND GRAPHENE SIZE ADJUSTING

PURPOSE: A method for growing graphene and a method for controlling the size of graphene crystal are provided to control the size of the graphene crystal and to be freely applied to other devices. CONSTITUTION: A method for growing graphene comprises: a step of depositing the graphene on a glass sub...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CHOI, JAE WU, LEE, CHANG MOOK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: A method for growing graphene and a method for controlling the size of graphene crystal are provided to control the size of the graphene crystal and to be freely applied to other devices. CONSTITUTION: A method for growing graphene comprises: a step of depositing the graphene on a glass substrate without a catalyst; a step of growing the graphene(S100); and a step of depositing a metal catalyst on the grown graphene(S200). The method further comprises a step of performing thermal treatment using CVD(chemical vapor deposition)(S300); and a step of etching using a metal etching solution(S400).