METHOD FOR PREPARING II TO VI GROUP SEMICONDUCTOR COMPOUND QUANTUM DOT OR NANOPARTICLES THROUGH SONOCHEMICAL METHOD UNDER MULTI-BUBBLE SONOLUMINESCENCE CONDITIONS, AND METHOD FOR CONTROLLING SIZE OF THE QUANTUM DOT OR THE NANOPARTICLES

PURPOSE: A manufacturing method for II to VI group semiconductor quantum dots or nano particles through a sonochemical method under multi-bubble sonoluminescence conditions and a method for controlling size of the quantum dots or the nano particles are provided to control size of the quantum dots or...

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Bibliographische Detailangaben
Hauptverfasser: HWANG, CHA HWAN, SHIM, IL WUN, SONG, MI YOUN, PARK, JONG PIL
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:PURPOSE: A manufacturing method for II to VI group semiconductor quantum dots or nano particles through a sonochemical method under multi-bubble sonoluminescence conditions and a method for controlling size of the quantum dots or the nano particles are provided to control size of the quantum dots or the nano particles by controlling the sonoluminescence conditions or plastic conditions. CONSTITUTION: A mixture of II to VI group semiconductor precursors, a dispersant, and a surfactant are manufactured in a polar or nonpolar solvent. Semiconductor quantum dots are manufactured by processing the mixture with ultrasonic waves under a multi-bubble sonoluminescence condition. The II to VI group semiconductor precursors include Cd(cadmium)Cl2(chlorine gas) and Te(tellurium) or Se(selenium) powder.