POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

PURPOSE: A power semiconductor device is provided to improve short circuit ruggedness and improve a breakdown voltage property. CONSTITUTION: A common gate electrode(121) is formed around a semiconductor substrate(110). A first trench is connected to the common gate electrode. A first gate electrode...

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Hauptverfasser: KIM, WEON CHAN, SONG, IN HYUK
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator KIM, WEON CHAN
SONG, IN HYUK
description PURPOSE: A power semiconductor device is provided to improve short circuit ruggedness and improve a breakdown voltage property. CONSTITUTION: A common gate electrode(121) is formed around a semiconductor substrate(110). A first trench is connected to the common gate electrode. A first gate electrode is filled in the first trench and is connected to the common gate electrode. A second trench(141) is formed in parallel to the first trench. A second gate electrode(142) is electrically separated from the common gate electrode.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title POWER SEMICONDUCTOR DEVICE
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