POWER SEMICONDUCTOR DEVICE
PURPOSE: A power semiconductor device is provided to improve short circuit ruggedness and improve a breakdown voltage property. CONSTITUTION: A common gate electrode(121) is formed around a semiconductor substrate(110). A first trench is connected to the common gate electrode. A first gate electrode...
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| Sprache: | eng ; kor |
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| Zusammenfassung: | PURPOSE: A power semiconductor device is provided to improve short circuit ruggedness and improve a breakdown voltage property. CONSTITUTION: A common gate electrode(121) is formed around a semiconductor substrate(110). A first trench is connected to the common gate electrode. A first gate electrode is filled in the first trench and is connected to the common gate electrode. A second trench(141) is formed in parallel to the first trench. A second gate electrode(142) is electrically separated from the common gate electrode. |
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