APPARATUS FOR GROWING POLY SILICON USING SUPERHEATED VAPOR WITH A FUNCTION OF IMPROVED ENERGY EFFICIENCY AND REMOVAL POLLUTANT

PURPOSE: A polysilicon growing apparatus is provided to prevent the destruction of pipes and to reduce energy consumption by generating superheated vapor of high temperatures based on low power and rapidly heating a silicon core rod part based on the superheated vapor. CONSTITUTION: A polysilicon gr...

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Bibliographische Detailangaben
Hauptverfasser:	YOU, HO JUNG, KIM, SEUNG HYUN, KANG, SEUNG OH, PARK, KUN, LEE, CHANG RAE, PARK, GYU DONG, PARK, SUNG EUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PURPOSE: A polysilicon growing apparatus is provided to prevent the destruction of pipes and to reduce energy consumption by generating superheated vapor of high temperatures based on low power and rapidly heating a silicon core rod part based on the superheated vapor. CONSTITUTION: A polysilicon growing apparatus includes a bell-jar reactor(110), an electrode part(120), a silicon core rod part(130), and a superheated vapor type heating part(200). The bell-jar reactor includes a feed gas inlet and an outlet in order to generate the growing atmosphere of polysilicon in a chamber. The electrode part includes a first electrode(122) and a second electrode(124). Currents are introduced into the first electrode. The second electrode is spaced apart from the first electrode and is conducted. Both end parts of the silicon core rod part connect the first electrode and the second electrode. The silicon core rod part is heated by generating superheated vapor and supplying the superheated vapor into the bell-jar reactor.