COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE METERIALS

COMPOSITE TARGET SPUTTERING FOR FORMING DOPED PHASE CHANGE METERIALS

PURPOSE: A composite target sputtering for forming doped phase change materials is provided to prevent yield reduction by using oxygen as a reactive gas. CONSTITUTION: A bottom electrode structure is formed on a substrate. A sputter target with phase change materials is used. A phase change memory m...

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Bibliographische Detailangaben
Hauptverfasser: LUNG HSIANG LAN, CHEN CHIEH FANG, BREITWISCH MATTHEW J, CHENG HUAI YU, SHIH YEN HAO, RAOUX SIMONE
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: A composite target sputtering for forming doped phase change materials is provided to prevent yield reduction by using oxygen as a reactive gas. CONSTITUTION: A bottom electrode structure is formed on a substrate. A sputter target with phase change materials is used. A phase change memory material layer(312A,312B) is formed on a bottom electrode(320). The phase change memory material layer includes silicon and silicon additives by sputtering. A top electrode(340) is formed on the phase change memory material layer.