PHOTORESISTS AND METHODS FOR USE THEREOF

PURPOSE: A method for manufacturing an ion-implanted semiconductor substrate, the substrate, and a photoresist relief image forming method, and a photoresist composition are provided to secure superior resolution and adhesion to a SiON layer and an inorganic substrate layer. CONSTITUTION: A method f...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	CAPORALE STEFAN J, POHLERS GERHARD
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PURPOSE: A method for manufacturing an ion-implanted semiconductor substrate, the substrate, and a photoresist relief image forming method, and a photoresist composition are provided to secure superior resolution and adhesion to a SiON layer and an inorganic substrate layer. CONSTITUTION: A method for manufacturing an ion-implanted semiconductor substrate includes the following: a chemically amplified positive-active photoresist composition-based relief image is coated on a semiconductor substrate; and ions are implanted on the substrate. The composition includes a resin, a photo-active component, and a multi-keto component. The multi-keto component is a resin, and the resin includes a photoacid-labile group. The multi-keto component includes at least two adjacent non-cyclic keto groups.