METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE AND CONTACT PLUG OF SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a non-volatile memory device and a contact plug of a semiconductor device are provided to prevent defects when a gate electrode is formed by forming a sidewall insulating layer in a channel region. CONSTITUTION: Interlayer sacrificial layers and interlayer dielect...

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Bibliographische Detailangaben
Hauptverfasser:	HWANG, KI HYUN, YANG, SANG RYOL, KIM, JIN GYUN, PARK, SEUNG BAE, CHOI, JI HOON, JEE, JUNG GEUN, LEE, WOONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for manufacturing a non-volatile memory device and a contact plug of a semiconductor device are provided to prevent defects when a gate electrode is formed by forming a sidewall insulating layer in a channel region. CONSTITUTION: Interlayer sacrificial layers and interlayer dielectric layers(160) are alternatively laminated on a substrate. First openings are formed while being connected to the substrate passing through the interlayer sacrificial layers and the interlayer dielectric layers. Sidewall insulating layers(120) having different thicknesses according to a height from the substrate are formed on sidewalls of the first openings. Channel regions(130) are formed on the sidewall insulating layers.