SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME

PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to generate optical power efficiency by including a substrate having a circular upper surface unevenness pattern. CONSTITUTION: A semiconductor light emitting device includes a substrate, a conductive laye...

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Bibliographische Detailangaben
Hauptverfasser:	BAE, JEONG WOON, JOO, JONG RYANG, AN, KYOUNG JOON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to generate optical power efficiency by including a substrate having a circular upper surface unevenness pattern. CONSTITUTION: A semiconductor light emitting device includes a substrate, a conductive layer formed on the substrate, an active layer(30), and an electrode. A circular upper surface unevenness pattern(50) having a vertical side and a circular upper surface is formed on the surface of the substrate in the projecting of a cross section. The vertical side of the circular upper surface unevenness pattern is formed by an anisotropic etching process. The circular upper surface of the circular upper surface unevenness pattern is formed by the isotropic etching process.