METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent dishing by forming an inter-layer insulating film having a flat upper side for each area on a substrate. CONSTITUTION: A second barrier film is formed on a first interlayer insulating film. A second secondary inter-laye...

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Bibliographische Detailangaben
Hauptverfasser:	MUN, CHANG SUP, PYO, MYUNG JUNG, LIM, JONG HEUN, YOON, BYOUNG MOON, KIM, HYO JUNG, KIM, KYUNG HYUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method of manufacturing a semiconductor device is provided to prevent dishing by forming an inter-layer insulating film having a flat upper side for each area on a substrate. CONSTITUTION: A second barrier film is formed on a first interlayer insulating film. A second secondary inter-layer insulating film is formed by etching a part of the first interlayer insulating film and the second barrier film. A part of the second barrier film and the second secondary inter-layer insulating film is primarily ground. The second secondary inter-layer insulating film is secondarily ground in order to expose a first barrier layer pattern and the second barrier film. A second barrier film pattern(20b) and a second inter-layer insulating film(18b) are formed on a substrate in a second region.