OXIDE INCLUDING FILM, AND OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, AND FABRICATION METHOD OF OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR USING THE SAME

OXIDE INCLUDING FILM, AND OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR, AND FABRICATION METHOD OF OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR USING THE SAME

PURPOSE: An oxide insulation film, an oxide semiconductor thin film transistor, and a manufacturing method thereof are provided to have high specific resistance by adding a carbon atom to an oxygen atom. CONSTITUTION: A carbon atom is additionally added to an oxygen atom. The carbon atom is added wi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: YUN, KWI YOUNG, OANA YASUHISA
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE: An oxide insulation film, an oxide semiconductor thin film transistor, and a manufacturing method thereof are provided to have high specific resistance by adding a carbon atom to an oxygen atom. CONSTITUTION: A carbon atom is additionally added to an oxygen atom. The carbon atom is added with 1-5% of a gas flow rate in sputtering. An oxide semiconductor material contains the oxygen atom of an appropriate amount. The oxide semiconductor material is used as a channel semiconductor layer. An oxide insulation layer material contains the carbon atom of the appropriate amount added to the oxygen atom.