PLASMA GENERATING METHOD AND SUBSTRATE TREATING APPARATUS AND METHOD USING THE PLASMA GENERATING METHOD

PLASMA GENERATING METHOD AND SUBSTRATE TREATING APPARATUS AND METHOD USING THE PLASMA GENERATING METHOD

PURPOSE: A plasma generation method, a substrate processing apparatus using the same, and a method thereof are provided to increase a production amount of hydrogen plasma by adding auxiliary gas, thereby improving ashing efficiency. CONSTITUTION: A susceptor(140) is located inside a process chamber....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE, CHANG WEON, YANG, JAE KYUN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A plasma generation method, a substrate processing apparatus using the same, and a method thereof are provided to increase a production amount of hydrogen plasma by adding auxiliary gas, thereby improving ashing efficiency. CONSTITUTION: A susceptor(140) is located inside a process chamber. A plasma support part(200) generates plasma inside a discharge space located on the upper part of a substrate and supplies the plasma to the substrate. A process gas supply part(250) supplies hydrogen gas to the discharge space. An auxiliary gas supply part(260) supplies auxiliary gas to the discharge space. Two or more gases among oxygen gas, helium gas, neon gas, and nitrogen gas are mixed for forming the auxiliary gas.