MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE

MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE

PURPOSE: A semiconductor light emitting device manufacturing method is provided to minimize degradation of electrode properties, thereby forming a transparent electrode with superior electrical performance. CONSTITUTION: An n-type nitride semiconductor layer(102), an active layer, and a p-type nitri...

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Bibliographische Detailangaben
Hauptverfasser: HUR, WON GOO, CHOI, SEUNG WOO, KIM, GI BUM, SHIN, YOUNG CHUL
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PURPOSE: A semiconductor light emitting device manufacturing method is provided to minimize degradation of electrode properties, thereby forming a transparent electrode with superior electrical performance. CONSTITUTION: An n-type nitride semiconductor layer(102), an active layer, and a p-type nitride semiconductor layer(104) are successively formed on a substrate in order to form a light emitting structure. A transparent electrode is formed using a sputtering process on a p-type nitride semiconductor layer. The sputtering process is performed inside of a reaction chamber which includes nitrogen gas.