SEMICONDUCTOR APPARATUS AND METHOD MANUFACTURING THEREOF

PURPOSE: A semiconductor device and a manufacturing method are provided to create an effect using 3 channels by using a triple gate and to prevent an electric potential to be generated within an undoped layer. CONSTITUTION: A buffer layer(200) is formed on a substrate(100). A doped layer(300) is formed on the buffer layer. A buried insulating layer(400) is formed on one area of the doped layer. An undoped layer(500) of a fin type is formed on one area of the buried insulating layer through an ELO(Epitaxial Lateral Overgroth) mode. An insulating layer(700) which covers at least a part of undoped layer surface is formed. A gate(800) covering the insulating layer is formed. Source and drain are formed on the undoped layer surface which does not covered by the insulating layer. The doped layer is an n-type GaN layer and the undoped layer is a GaN layer.