SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a supporting plate to be bent by controlling thermal stress in a manufacturing process which spreads insulating resin. CONSTITUTION: A semiconductor element(3) is replaced on a supporting plate(1). The semicon...
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| creator | IWAMI YASUNARI TAKAHASHI TOMOKO CHIKAI TOMOSHIGE CHIN SOKO MITSUGI SHINGO YAMAGATA OSAMU MARUTANI HISAKAZU |
| description | PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a supporting plate to be bent by controlling thermal stress in a manufacturing process which spreads insulating resin. CONSTITUTION: A semiconductor element(3) is replaced on a supporting plate(1). The semiconductor element has a circuit element surface in which a plurality of first electrodes(5) is formed. A first insulation layer(7) comprises a plurality of first openings(9) which expose the plurality of first electrodes. A second insulation layer(17) coats the top of the supporting plate and the side of the semiconductor element. A wiring layer(20) contacts the top of the first insulation layer and the second insulation layer. The wiring layer is electrically connected to the plurality of first electrodes. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_KR20120031423A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>KR20120031423A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_KR20120031423A3</originalsourceid><addsrcrecordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBoZGBgbGhiZGxo7GxKkCABuOKVM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><source>esp@cenet</source><creator>IWAMI YASUNARI ; TAKAHASHI TOMOKO ; CHIKAI TOMOSHIGE ; CHIN SOKO ; MITSUGI SHINGO ; YAMAGATA OSAMU ; MARUTANI HISAKAZU</creator><creatorcontrib>IWAMI YASUNARI ; TAKAHASHI TOMOKO ; CHIKAI TOMOSHIGE ; CHIN SOKO ; MITSUGI SHINGO ; YAMAGATA OSAMU ; MARUTANI HISAKAZU</creatorcontrib><description>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a supporting plate to be bent by controlling thermal stress in a manufacturing process which spreads insulating resin. CONSTITUTION: A semiconductor element(3) is replaced on a supporting plate(1). The semiconductor element has a circuit element surface in which a plurality of first electrodes(5) is formed. A first insulation layer(7) comprises a plurality of first openings(9) which expose the plurality of first electrodes. A second insulation layer(17) coats the top of the supporting plate and the side of the semiconductor element. A wiring layer(20) contacts the top of the first insulation layer and the second insulation layer. The wiring layer is electrically connected to the plurality of first electrodes.</description><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120403&DB=EPODOC&CC=KR&NR=20120031423A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120403&DB=EPODOC&CC=KR&NR=20120031423A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IWAMI YASUNARI</creatorcontrib><creatorcontrib>TAKAHASHI TOMOKO</creatorcontrib><creatorcontrib>CHIKAI TOMOSHIGE</creatorcontrib><creatorcontrib>CHIN SOKO</creatorcontrib><creatorcontrib>MITSUGI SHINGO</creatorcontrib><creatorcontrib>YAMAGATA OSAMU</creatorcontrib><creatorcontrib>MARUTANI HISAKAZU</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><description>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a supporting plate to be bent by controlling thermal stress in a manufacturing process which spreads insulating resin. CONSTITUTION: A semiconductor element(3) is replaced on a supporting plate(1). The semiconductor element has a circuit element surface in which a plurality of first electrodes(5) is formed. A first insulation layer(7) comprises a plurality of first openings(9) which expose the plurality of first electrodes. A second insulation layer(17) coats the top of the supporting plate and the side of the semiconductor element. A wiring layer(20) contacts the top of the first insulation layer and the second insulation layer. The wiring layer is electrically connected to the plurality of first electrodes.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U_B19At1c3QOCQ3y9HNXCPFwVQh29HXlYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx3kFGBoZGBgbGhiZGxo7GxKkCABuOKVM</recordid><startdate>20120403</startdate><enddate>20120403</enddate><creator>IWAMI YASUNARI</creator><creator>TAKAHASHI TOMOKO</creator><creator>CHIKAI TOMOSHIGE</creator><creator>CHIN SOKO</creator><creator>MITSUGI SHINGO</creator><creator>YAMAGATA OSAMU</creator><creator>MARUTANI HISAKAZU</creator><scope>EVB</scope></search><sort><creationdate>20120403</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><author>IWAMI YASUNARI ; TAKAHASHI TOMOKO ; CHIKAI TOMOSHIGE ; CHIN SOKO ; MITSUGI SHINGO ; YAMAGATA OSAMU ; MARUTANI HISAKAZU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20120031423A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IWAMI YASUNARI</creatorcontrib><creatorcontrib>TAKAHASHI TOMOKO</creatorcontrib><creatorcontrib>CHIKAI TOMOSHIGE</creatorcontrib><creatorcontrib>CHIN SOKO</creatorcontrib><creatorcontrib>MITSUGI SHINGO</creatorcontrib><creatorcontrib>YAMAGATA OSAMU</creatorcontrib><creatorcontrib>MARUTANI HISAKAZU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IWAMI YASUNARI</au><au>TAKAHASHI TOMOKO</au><au>CHIKAI TOMOSHIGE</au><au>CHIN SOKO</au><au>MITSUGI SHINGO</au><au>YAMAGATA OSAMU</au><au>MARUTANI HISAKAZU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME</title><date>2012-04-03</date><risdate>2012</risdate><abstract>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a supporting plate to be bent by controlling thermal stress in a manufacturing process which spreads insulating resin. CONSTITUTION: A semiconductor element(3) is replaced on a supporting plate(1). The semiconductor element has a circuit element surface in which a plurality of first electrodes(5) is formed. A first insulation layer(7) comprises a plurality of first openings(9) which expose the plurality of first electrodes. A second insulation layer(17) coats the top of the supporting plate and the side of the semiconductor element. A wiring layer(20) contacts the top of the first insulation layer and the second insulation layer. The wiring layer is electrically connected to the plurality of first electrodes.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
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