METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

PURPOSE: A method for manufacturing a semiconductor device and a substrate processing apparatus are provided to improve a nitrification speed of an oxide layer by performing a nitrification process using H2 gas and N2 gas. CONSTITUTION: A substrate is supported and heated by a substrate support unit...

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Bibliographische Detailangaben
1. Verfasser:	HORIE TADASHI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for manufacturing a semiconductor device and a substrate processing apparatus are provided to improve a nitrification speed of an oxide layer by performing a nitrification process using H2 gas and N2 gas. CONSTITUTION: A substrate is supported and heated by a substrate support unit in a processing chamber(S20). A flow rate of hydrogen containing gas and nitrogen containing gas is controlled by a gas flow control unit(S30). A rate of hydrogen element to the total of the hydrogen element and the nitrogen element is 0-80%. Processed gas is supplied to a processing chamber(S40). The gas supplied to the processing chamber is excited(S50). A substrate is processed with the excited gas(S60).