SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve contact resistance characteristics between a semiconductor pattern and a pad pattern by offering a structure capable of steadily contacting the semiconductor pattern and the pad pattern. CONSTITUTION: Horizontal patterns comprise a plurality of openings. A pad pattern(18) is offered within an upper region of the opening. A gap fill structure(27) of insulating properties is offered within the pad pattern and the opening. The gap fill structure comprises first and second gap fill patterns(21, 24). The first gap fill pattern comprises a first oxide. The second gap fill pattern comprises a second oxide having etching selection ratio which is different with the first oxide. A semiconductor pattern is formed between the sidewalls of the horizontal patterns, the sidewall of the pad pattern and the sidewall of the horizontal pattern.