SPUTTERING APPARATUS AND METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE OF LIGHT EMITTING DEVICE

PURPOSE: A sputtering device and method for forming a transparent conductive film of an emitting device is provided to prevent the deterioration of a p-type semiconductor by controlling the influence of plasma. CONSTITUTION: A target receiving part(110) is located in one inner side wall of a chamber...

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Bibliographische Detailangaben
Hauptverfasser:	HUR, WON GOO, KIM, GI BUM, SHIN, YOUNG CHUL
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A sputtering device and method for forming a transparent conductive film of an emitting device is provided to prevent the deterioration of a p-type semiconductor by controlling the influence of plasma. CONSTITUTION: A target receiving part(110) is located in one inner side wall of a chamber. A substrate receiving part(130) is formed in a location which faces the target receiving part. Metal net filters(190) having more than 2 layers are formed between the target receiving part and the substrate receiving part. At least one layer among the metal net filters having more than 2 layers is used for forming the transparent conductive film of an emitting device which is used as a grounding electrode. The metal net filters having more than 2 layers have a mesh type or a stripe type scale.