INDIRECT THERMAL CRYSTALIZATION THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

PURPOSE: An indirect thermal crystallization thin film transistor substrate and a manufacturing method thereof are provided to simultaneously use a copper alloy material with low resistance and good high temperature characteristics in a gate line and a gate electrode. CONSTITUTION: An indirect thermal crystallization thin film transistor substrate comprises the following steps. Gate metal is deposited and patterned on a substrate to form a gate line. A gate pad(GP) is connected to one end of the gate line. Gate elements include a gate electrode(G) branched from the gate line. An amorphous semiconductor channel layer is overlapped with the gate electrode by depositing an insulating film(GI) and an amorphous semiconductor layer on a substrate on which the gate elements are formed and patterning the amorphous semiconductor layer. An etch stopper layer and a heat transfer metal layer are deposited and patterned on the substrate on which the amorphous semiconductor channel layer is formed to form an etch stopper(ES) and a heat transfer pattern(HTL). The amorphous semiconductor channel layer is crystallized by applying an infrared laser on the surface of the heat transfer pattern to form a polycrystalline semiconductor channel layer(A'). The heat transfer pattern is eliminated. A source-drain element is formed by patterning a source-drain metal after an amorphous dopant semiconductor layer and the source-drain metal are deposited. The amorphous dopant semiconductor layer is patterned by the source-drain element as a mask. A thin film transistor is formed by completing an ohmic contact layer.